Abstract

In a particular case of Au-catalyzed In_xGa_{1 –x}As nanowires, wide compositional tuning has been obtained using metal organic vapor-phase epitaxy, which remains difficult for molecular beam epitaxy. In_xGa_{1 –x}As nanowires are demonstrated with x = 0.5, grown by Au-catalyzed molecular beam epitaxy via the vapor–solid–solid mode at a low temperature of 220°C. Low-temperature growth suppresses re-evaporation of indium and gallium atoms and their surface diffusion, which is why the composition of ternary nanowires is precisely determined by the indium content in vapor. This method can be used for compositional tuning of other ternary III–V and III–N nanowires grown by molecular beam epitaxy.

中文翻译：

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x Ga 1 – x作为具有50％成分的纳米线的MBE生长

摘要

在Au催化的In _x Ga _{1 – x} As纳米线的特殊情况下，使用金属有机气相外延获得了广泛的成分调谐，这对于分子束外延而言仍然很困难。在_x Ga _{1 – x}中用x演示了纳米线= 0.5，由Au催化的分子束外延在220°C的低温下通过汽-固-固模式生长。低温生长抑制了铟和镓原子的再蒸发及其表面扩散，这就是为什么三元纳米线的成分由蒸汽中的铟含量精确确定的原因。该方法可用于通过分子束外延生长的其他三元III–V和III–N纳米线的成分调谐。