Semiconductors ( IF 0.7 ) Pub Date : 2020-06-03 , DOI: 10.1134/s106378262006007x M. N. Huseynaliyev , S. N. Yasinova , D. N. Jalilli , S. I. Mekhtiyeva
Abstract
The spectroscopic ellipsometry method is used to investigate the optical properties of PbSe nanostructured thin films formed by the chemical deposition method. Function d2ε/dω2 formed by numerical differentiation of experimental data of the dielectric function ε/ω is used for better structural resolution of the interband transitions and the determination of critical points. Theoretical fitting is performed using the “Graphical Analysis” program. The best fit is found for the two-dimensional (2D) shape of the critical point (m = 0) for the energy region E = 2–3 eV, and one critical point corresponding to Eg = 2.5 eV is determined. This value is attributed to the L4 → L6 transition of the Brillouin zone.
中文翻译:
PbSe纳米结构薄膜的光学性质和临界点
摘要
椭圆偏振光谱法用于研究化学沉积法形成的PbSe纳米结构薄膜的光学性质。函数d 2 ε/ d ω 2由介电函数的实验数据的数值微分形成ε/ω被用于带间跃迁的更好的结构的分辨率和临界点的确定。使用“图形分析”程序进行理论拟合。对于能量区域E = 2-3 eV的临界点(m = 0)的二维(2D)形状,找到了最佳拟合,并且一个对应于E g的临界点= 2.5 eV被确定。该值归因于布里渊区的L 4 → L 6过渡。