Abstract

Ni²⁺-doped ZnO thin films were prepared for various Ni concentration on the porous silicon substrates. The residual stress in the ZnO thin film is relaxed with increase in the concentration of Ni. FESEM images show the growth of pillar-like nanostructures over the entire porous silicon substrates. The variation of resistivity due to UV illumination was observed for the Ni-doped ZnO thin films. Ideality factor value is less for the ZnO:Ni|PS hetero-junction diode than ZnO|PS hetero-junction, Ni doping in ZnO improves the rectifying behavior.

中文翻译：

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Ni掺杂对多孔硅衬底和ZnO | PS基异质结二极管上ZnO薄膜的影响

摘要

在多孔硅衬底上制备了各种浓度的Ni ²⁺掺杂的ZnO薄膜。ZnO薄膜中的残余应力随Ni浓度的增加而缓解。FESEM图像显示了整个多孔硅衬底上柱状纳米结构的生长。对于掺Ni的ZnO薄膜，观察到由于紫外线照射引起的电阻率变化。与ZnO | PS异质结相比，ZnO：Ni | PS异质结二极管的理想因子值较小，ZnO中的Ni掺杂可改善整流性能。