Abstract

The radiation doping of single-crystal silicon with phosphorus retains the structure of the sample, reduces internal stresses, and increases the lifetime of minority charge carriers. The study is concerned with the effect of phosphorus additives on the electronic properties of silicene. The electron density-of-states spectra of a phosphorus-doped single layer and 2 × 2 bilayer silicene on a graphite substrate are calculated by the quantum-mechanical method. The carbon substrate imparts semiconductor properties to silicene due to p–p hybridization. Doping with phosphorus can retain or modify the metal properties gained by silicene. The position of phosphorus dopant atoms in silicene influences the semiconductor–conductor transition. The theoretical specific capacity of a phosphorus-doped silicene electrode decreases, and the electrode becomes less efficient for application in lithium-ion batteries. However, the increase in the conductivity is favorable for use of this material in solar cells.

中文翻译：

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中子Trans变掺杂硅薄膜的电子性能

摘要

用磷对单晶硅进行辐射掺杂可以保留样品的结构，减少内部应力，并延长少数载流子的寿命。该研究涉及磷添加剂对硅的电子性能的影响。通过量子力学方法计算了石墨基板上的磷掺杂单层和2×2双层硅的电子态密度谱。由于p – p，碳衬底赋予硅树脂半导体特性杂交。掺磷可以保留或改变硅获得的金属性能。硅中磷掺杂原子的位置会影响半导体-导体的跃迁。磷掺杂的硅电极的理论比容量降低，并且电极在锂离子电池中的应用效率降低。然而，电导率的增加对于将该材料用于太阳能电池是有利的。