Interfacial Al-Ce-Cu-W amorphous layers formed through thermally driven solid-state amorphization within the (W+CeO₂)/2024Al composite were investigated. The elemental distributions and interfacial microstructures were examined with an electron probe microanalyzer and a high-resolution transmission electron microscope, respectively. The consolidation of composites consisted of two thermal processes: vacuum degassing (VD) and hot isostatic pressing (HIP). During consolidation, not only the three major elements (Al, W, and Ce) but also the alloying elements (Mg and Cu) in the Al matrix contributed to amorphization. At VD and HIP temperatures of 723 K and 763 K, interfacial amorphous layers were formed within the composite. Three diffusion processes were necessary for interfacial amorphization: (a) long-range diffusion of Mg from the Al matrix to the interfaces during VD; (b) long-range diffusion of Cu from the Al matrix to the interfaces during HIP; (c) short-range diffusion of W toward the Al matrix during HIP. The newly formed interfacial Al-Ce-Cu-W amorphous layers can be categorized under the Al-Ce-TM (TM: transition metals) amorphous system.

（W + CeO ₂内）通过热驱动固态非晶化形成的界面Al-Ce-Cu-W非晶层）/ 2024Al复合材料进行了研究。用电子探针显微分析仪和高分辨率透射电子显微镜分别检查了元素分布和界面微观结构。复合材料的固结包括两个热过程：真空脱气（VD）和热等静压（HIP）。在固结过程中，不仅Al基体中的三个主要元素（Al，W和Ce）而且合金元素（Mg和Cu）也有助于非晶化。在723 K和763 K的VD和HIP温度下，复合材料内形成了界面非晶层。界面非晶化需要三个扩散过程：（a）VD期间Mg从Al基体到界面的远距离扩散；（b）HIP过程中Cu从Al基体到界面的远距离扩散；（c）HIP过程中W向Al基体的短程扩散。新形成的界面Al-Ce-Cu-W非晶层可以归类为Al-Ce-TM（TM：过渡金属）非晶体系。