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An inductor-less CMOS broadband balun g m -boosting LNA exploiting noise cancellation techniques
Analog Integrated Circuits and Signal Processing ( IF 1.4 ) Pub Date : 2020-06-03 , DOI: 10.1007/s10470-020-01665-2
Tingting Han , Zhiqun Li , Mi Tian

This paper presents a 100 MHz to 6 GHz broadband inductor-less single-to-differential balun gm-boosting low-noise amplifier (LNA) for multi-standard radio applications. Two mechanisms of noise cancellation techniques have been innovatively introduced in this work. To achieve the wideband input matching, high gain, and low noise figure simultaneously, a feed-forward thermal noise cancellation technique has been exploited in the design of the inverting amplifier for transconductance enhancement. Moreover, the balanced balun operation transforms the thermal noise of the common-gate transistor into a common-mode signal, and cancels it at the LNA’s differential outputs. The proposed design has been fabricated in a standard 0.18-um RF CMOS technology and occupies a die area of 0.04 mm2. Measurement results have shown that it has achieved a good performance over the whole operation frequency range of interest (100 MHz to 6 GHz) with a gain of 15.5 dB, IIP3 of 1.5 dBm, minimum NF of 3.0 dB and current dissipation of 8 mA at 1.8 V supply voltage.



中文翻译:

利用噪声消除技术的无电感CMOS宽带巴伦gm提升LNA

本文提出了一种100MHz到6GHz的宽带无电感单-差分平衡-不平衡变换器克-boosting用于多标准无线应用的低噪声放大器(LNA)。在这项工作中已经创新性地引入了两种噪声消除技术的机制。为了同时实现宽带输入匹配,高增益和低噪声系数,在反相放大器的设计中已采用前馈热噪声消除技术来增强跨导。此外,平衡巴伦运算将共栅晶体管的热噪声转换为共模信号,并在LNA的差分输出处将其消除。拟议的设计采用标准的0.18um RF CMOS技术制造,并且占据了0.04 mm 2的管芯面积。测量结果表明,在感兴趣的整个工作频率范围(100 MHz至6 GHz)上,它具有15.5 dB的增益,1.5 dBm的IIP3、3.0 dB的最小NF和8 mA的电流耗散,均具有良好的性能。 1.8 V电源电压。

更新日期:2020-06-03
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