In this paper, a systematic research on the total-ionizing-dose (TID) effects of NMOS and PMOS silicon-on-insulator (SOI) FinFETs is performed experimentally. The bias and geometry dependence of TID effects are analysed. The experimental results show that the threshold voltage (V th ) shift occurs in SOI FinFETs after x-ray irradiation. After 1 Mrad(Si) irradiation, the maximum V th shift is about 40 mV. The ‘worst case’ irradiation bias conditions for NMOS and PMOS are TG and ON states, respectively, which induces the largest V th shift after irradiation. The 3D TCAD simulation is carried out to further analyse the bias dependence results. Simulation results highlight the difference in electric field distribution in the buried oxide under different bias configurations, which leads to different distribution of irradiation-induced trapped charges. Finally, clear geometry dependence is observed in the TID experiment. Both NMOS and PMOS devices with lar...

中文翻译：

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SOI FinFET中总电离剂量效应的偏置和几何形状依赖性

本文通过实验对NMOS和PMOS绝缘体上硅（FoFET）的总电离剂量（TID）效应进行了系统研究。分析了TID效应的偏倚和几何形状依赖性。实验结果表明，在X射线辐照后，SOI FinFET中出现阈值电压（V th）偏移。辐照1 Mrad（Si）后，最大Vth漂移约为40 mV。NMOS和PMOS的“最坏情况”辐照偏置条件分别为TG和ON状态，这会在辐照后引起最大的Vth偏移。进行了3D TCAD仿真，以进一步分析偏差相关性结果。仿真结果突出了在不同偏压配置下掩埋氧化物中电场分布的差异，这导致了辐射诱导的俘获电荷的不同分布。最后，在TID实验中观察到明确的几何相关性。NMOS和PMOS器件都具有较大的...