A nanodisk array of blue InGaN/GaN multiple quantum wells was made using neutral beam etching (NBE) followed by GaN regrowth. The NBE-fabricated nanodisk presented a vertical and highly smooth sidewall surface where the InGaN well layers were easily distinguished even with a scanning electron microscope. A high interface quality without any voids or obvious defects was obtained between the nanodisk and the regrown-GaN layer. The nanodisk after regrowth presented a smaller blueshift of photoluminescence emission energy (12 meV) and a substantially higher and almost constant internal quantum efficiency of ~50% over three orders of magnitude of excitation laser power when compared to the nanodisk before regrowth. This study shows that the process of NBE nanodisk etching followed by GaN regrowth represents a promising step forward in the development of truncated cone-shaped directional micro-LEDs with a buried active region in a top-town structure.

中文翻译：

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通过中性光束蚀刻和 GaN 再生长制造的高质量 InGaN/GaN MQW 纳米盘：朝向自顶向下结构的定向微型 LED

蓝色 InGaN/GaN 多量子阱的纳米盘阵列是使用中性束蚀刻 (NBE) 和 GaN 再生长制成的。NBE 制造的纳米盘呈现出垂直且高度光滑的侧壁表面，即使使用扫描电子显微镜也可以轻松区分 InGaN 阱层。在纳米盘和再生长的 GaN 层之间获得了没有任何空隙或明显缺陷的高界面质量。与再生长前的纳米盘相比，再生长后的纳米盘呈现出较小的光致发光发射能量蓝移 (12 meV)，并且在三个数量级的激发激光功率上具有更高且几乎恒定的约 50% 的内部量子效率。