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Evidence of O‐Polar (000 1 ¯ ) ZnO Surfaces Induced by In Situ Ga Doping
Physica Status Solidi-Rapid Research Letters ( IF 2.8 ) Pub Date : 2020-06-02 , DOI: 10.1002/pssr.202070029
Vincent Sallet 1 , Corinne Sartel 1 , Christophe Arnold 1 , Said Hassani 1 , Christèle Vilar 1 , Gaelle Amiri 1 , Alain Lusson 1 , Pierre Galtier 1 , Julien Barjon 1 , Karine Masenelli-Varlot 2 , Bruno Masenelli 3
Affiliation  

In situ Ga doping during the metal‐organic chemical vapor deposition (MOCVD) growth of Aucatalyzed ZnO nanowires induces the formation of new O‐polar surfaces, demonstrating that crystal facet engineering can be achieved through a modification of surface energies. Nanostructures having opposite polarities are generated: Christmas trees grown along +C (0001) axis exhibit overhangs, while Taipei towers grown along −C (000‐1) axis show terraces. For further details see article number 2000037 by Vincent Sallet et al.
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中文翻译:

原位Ga掺杂诱导O-极化(000 1)ZnO表面的证据

Au催化的ZnO纳米线的金属有机化学气相沉积(MOCVD)生长过程中的原位Ga掺杂诱导了新的O极性表面的形成,这表明可以通过改变表面能来实现晶面工程。产生具有相反极性的纳米结构:沿+ C(0001)轴生长的圣诞树显示悬垂,而沿− C(000-1)轴生长的台北塔显示梯田。有关更多详细信息,请参见Vincent Sallet等人的商品编号2000037。
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更新日期:2020-06-02
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