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Analytical Review of Two-Signal Methods for Measuring the S-Parameters of Two-Port Networks
Optoelectronics, Instrumentation and Data Processing Pub Date : 2019-11-01 , DOI: 10.3103/s8756699019060050
S. V. Savel’kaev , V. A. Litovchenko , N. V. Zarzhetskaya

In this paper, we consider two-signal and modified two-signal methods for measuring the S-parameters of passive two-ports and a method for adequately measuring the S-parameters of two-ports, such as transistors, developed on their basis. The methods are implemented using a coaxial simulator-analyzer of microwave amplifiers and oscillators in its measuring channels matched or mismatched with loads. The field of application and the interrelation between these methods are investigated, and their advantages and disadvantages are discussed. Data on the maximum measurement error of the methods are presented.

中文翻译:

用于测量双端口网络 S 参数的双信号方法的分析回顾

在本文中,我们考虑测量无源双端口 S 参数的双信号和改进的双信号方法,以及在它们的基础上开发的充分测量双端口(如晶体管)S 参数的方法。这些方法是在其测量通道中使用与负载匹配或不匹配的微波放大器和振荡器的同轴模拟器-分析器来实现的。研究了这些方法的应用领域和相互关系,并讨论了它们的优缺点。提供了有关方法的最大测量误差的数据。
更新日期:2019-11-01
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