A method for forming p-n-diode based silicon electro-optic modulators using local oxidation is tested. It is shown that the local oxidation of silicon allows forming a rib waveguide as a smoothed trapezoid, in contrast to the classical technique of creating a rib waveguide by plasma-chemical etching. The main advantages of the approach used are described: controllability and reproducibility of critical design parameters of the modulators (width and height of the waveguide rib), low surface roughness, and the possibility of using approaches to forming a modulating p-n-diode of combined type in a rib waveguide, which are standard for planar technologies.

中文翻译：

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基于硅 pn 二极管的电光调制器

测试了一种使用局部氧化形成基于 pn 二极管的硅电光调制器的方法。结果表明，与通过等离子体化学蚀刻创建肋形波导的经典技术相比，硅的局部氧化允许将肋形波导形成为平滑梯形。描述了所用方法的主要优点：调制器关键设计参数（波导肋的宽度和高度）的可控性和再现性、低表面粗糙度以及使用方法形成组合型调制 pn 二极管的可能性在肋形波导中，这是平面技术的标准。