Using the method of electron beam evaporation, the conductive films of gallium doped (1.6 at%) zinc oxide (GZO) were obtained. As the upper and lower electrodes, silver and glass substrates coated with tin oxide doped with fluorine (FTO) were used, respectively. The films were annealed in air at 350°C for 1 hour. The current-voltage characteristics of the Ag/GZO/FTO structure reveal a linear behavior. Annealing of the entire structure of Ag/GZO/FTO under the same conditions results in a change in the behavior of the current-voltage characteristic from ohmic to the diode with the Schottky barrier. Using the theory of thermionic emission, the methods of Cheung and Norde, the current-voltage characteristics of forward bias are analyzed and the values of ideality factor, the Schottky barrier height, and series resistance are determined.

使用电子束蒸发的方法，获得了掺杂了镓（1.6at％）的氧化锌（GZO）的导电膜。作为上电极和下电极，分别使用涂覆有掺杂有氟的氧化锡（FTO）的银和玻璃基板。将膜在350℃的空气中退火1小时。Ag / GZO / FTO结构的电流-电压特性显示出线性行为。在相同条件下对Ag / GZO / FTO的整个结构进行退火会导致电流-电压特性的行为从欧姆变为具有肖特基势垒的二极管。运用热电子发射理论，Cheung和Norde的方法，分析了正向偏压的电流-电压特性，并确定了理想因子，肖特基势垒高度和串联电阻的值。