Abstract—

The effect of the amorphous transition layer at the interface between Mn₄Si₇ and silicon doped with manganese on the photoelectric properties of heterostructures is considered. It is found that the precipitated Mn atoms on the silicon surface are grouped at high temperatures, forming drops of liquid manganese, which dissolve the near-surface layer of silicon, forming a liquid solution-melt of Mn with Si. As the solution solidifies, Mn₄Si₇ forms, and the Si–Si bonds under the silicide break due to intense diffusion of Si atoms; an elastically deformed Si region forms, which predetermines the evolution of the formation of photoelectric phenomena in the Mn₄Si₇–Si❬Mn❭–Mn₄Si₇ and Mn₄Si₇–Si❬Mn❭–M heterostructures. The microstructure and chemical composition of doped Si❬Mn❭ samples were studied by means of scanning electron microscopy and X-ray energy dispersive spectrometry using a Quanta 200-3D microscope, and the interface structure of the higher manganese silicide (HMS) and Si❬Mn❭ layer at the nanoscale was refined using the Fourier transform of local zones of high-resolution electron-microscopic images. It is concluded that in the process of diffusion doping of silicon with manganese, broken layers on the surface of the crystal deepen the embedding of manganese atoms, facilitate adsorption, dissolution, and diffusion of Mn in the volume of Si, and also enable the formation of an amorphous layer at the interface of higher manganese silicide and the Si❬Mn❭ layer. The presence of an amorphous transition layer facilitates the process of impact ionization of current carriers upon application of external voltage, as well as the formation of photoelectric phenomena: infrared quenching, temperature quenching, high photosensitivity, and long-term relaxation of residual conductivity.

中文翻译：

---

硅中的结构缺陷对光敏Mn 4 Si 7-Si❬Mn❭-Mn4 Si 7和Mn 4 Si7-Si❬Mn❭-M异质结构形成的影响

摘要-

考虑了Mn ₄ Si ₇与掺杂锰的硅之间的界面处的非晶过渡层对异质结构的光电性能的影响。发现在高温下将在硅表面上沉淀的Mn原子归类，形成液态锰的液滴，其溶解硅的近表层，从而形成Mn与Si的液态熔体。随着溶液的凝固，形成Mn ₄ Si ₇，并且由于硅原子的强烈扩散，硅化物下的Si–Si键断裂。弹性变形的Si区的形式，这在预先确定将Mn形成的光电现象的进化₄的Si ₇ -Si❬Mn❭锰₄Si ₇和Mn ₄ Si ₇-Si❬Mn❭-M异质结构。使用Quanta 200-3D显微镜，通过扫描电子显微镜和X射线能谱仪研究了掺杂的Si❬Mn❭样品的显微结构和化学成分，以及高锰硅化物（HMS）和Si❬的界面结构。使用高分辨率电子显微镜图像局部区域的傅立叶变换，对纳米级的Mn +层进行了细化。结论是，在硅与锰的扩散掺杂过程中，晶体表面的破碎层加深了锰原子的嵌入，促进了锰在硅体积中的吸附，溶解和扩散，并使其形成。硅化锰和Si 3 Mn 3层界面处的非晶层的厚度。