Abstract

Based on the obtained experimental data, a model is developed for the processes of a variation in the charge state of MIS (metal–insulator–semiconductor) structures under the concurrent influence of high-field tunneling electron injection and radiation. The model takes into account the interaction between injected electrons and charges appearing in the dielectric film due to radiation and high-field ionization. It is shown that some holes may be annihilated during the interaction between injected electrons and holes trapped in a SiO₂ film, thus leading to the formation of surface states at the interface with silicon. The effect of the electric-field intensity and injection current density on the generation and annihilation of positive charge and the formation of surface states under radiation is studied. The effect of charge processes occurring in the insulator film of a MIS structure under the concurrent action of radiation and high-field electron injection on a change in the threshold voltage of MIS devices and radiation sensors based on them is considered.

中文翻译：

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辐射和高场电子注入的共同作用下MIS结构介电膜中的电荷效应

摘要

根据获得的实验数据，开发了一个模型，用于在高场隧穿电子注入和辐射的共同影响下，MIS（金属-绝缘体-半导体）结构的电荷状态发生变化。该模型考虑了注入的电子与由于辐射和高场电离作用而出现在介电膜中的电荷之间的相互作用。结果表明，在注入的电子与SiO ₂俘获的空穴之间的相互作用过程中，可能会消除一些空穴膜，从而导致在与硅的界面处形成表面态。研究了电场强度和注入电流密度对正电荷的产生和an灭以及辐射下表面态形成的影响。考虑在辐射和高场电子注入的共同作用下在MIS结构的绝缘膜中发生的电荷过程对MIS器件和基于它们的辐射传感器的阈值电压变化的影响。