Abstract

The effect of uniaxial elastic deformation on the current–voltage characteristic of surface–barrier Sb–p-Si〈Mn〉–Au diodes is studied. It is shown that reverse-current sensitivity to uniaxial compression exceeds the forward-current sensitivity at identical applied voltages. An increase in the forward current of these structures during deformation is caused by internal gain associated with redistribution of the applied voltage between the base and barrier.

中文翻译：

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单轴弹性变形对表面势垒Sb–p -Si <Mn〉 -Au二极管电流-电压特性的影响

摘要

研究了单轴弹性变形对表面势垒Sb- p -Si <Mn> -Au二极管电流-电压特性的影响。结果表明，在相同的施加电压下，单轴压缩的反向电流灵敏度超过了正向电流灵敏度。这些结构在变形过程中的正向电流增加是由内部增益引起的，该内部增益与在基极和势垒之间施加的电压的重新分配有关。