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Polarization Processes in Thin Layers of Amorphous MoS 2 Obtained by RF Magnetron Sputtering
Semiconductors ( IF 0.7 ) Pub Date : 2020-05-09 , DOI: 10.1134/s1063782620050073 A. A. Kononov , R. A. Castro-Arata , D. D. Glavnaya , V. M. Stozharov , D. M. Dolginsev , Y. Saito , P. Fons , N. I. Anisimova , A. V. Kolobov
中文翻译:
射频磁控溅射在非晶态MoS 2薄层中的极化过程
更新日期:2020-05-09
Semiconductors ( IF 0.7 ) Pub Date : 2020-05-09 , DOI: 10.1134/s1063782620050073 A. A. Kononov , R. A. Castro-Arata , D. D. Glavnaya , V. M. Stozharov , D. M. Dolginsev , Y. Saito , P. Fons , N. I. Anisimova , A. V. Kolobov
Abstract
The polarization processes in thin layers of amorphous molybdenum disulfide MoS2 are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization process, as well as the activation energies Ea and Eσ of the relaxation process and conductivity, respectively, are determined. The fact that the two activation energies are close to each other suggests that the processes of relaxation and charge transport are driven by the same mechanism.
中文翻译:
射频磁控溅射在非晶态MoS 2薄层中的极化过程
摘要
通过介电谱技术研究了非晶态二硫化钼MoS 2薄层中的极化过程。观察到偶极松弛的极化过程。该系统的微观参数进行计算,和偶极极化过程的弛豫时间,以及活化能Ë一个和Ë σ的弛豫过程和导电性,分别被确定。两种活化能彼此接近的事实表明,弛豫和电荷传输过程是由相同的机制驱动的。