Abstract

In this paper, a novel silicon carbide (SiC) super-junction U-shape metal-oxide semiconductor field-effect transistor (UMOSFET) with an integrated hetero-junction diode (HJD) is proposed and investigated using numerical simulations. The integrated HJD substantially improves body diode characteristics and reduces switching losses without degrading the static characteristics of the device. In this structure, a p⁺ shielding region between the p-poly region and p-pillar protects not only the bottom gate oxide but also the p-poly region from high electric fields. Compared with conventional SJ UMOSFETs, the proposed structure reduces the peak reverse recovery current (I_RR) by a factor of 2.58 and the reverse recovery charge (Q_RR) by a factor of 4.94. Moreover, the total switching energy loss is decreased by 50.2%.

中文翻译：

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新型具有异质结二极管的4 H -SiC超结UMOSFET，具有增强的反向恢复特性和低开关损耗

摘要

本文提出了一种新型的带有集成异质结二极管（HJD）的碳化硅（SiC）超结U型金属氧化物半导体场效应晶体管（UMOSFET），并使用数值模拟对其进行了研究。集成的HJD可以显着改善体二极管的特性并减少开关损耗，而不会降低器件的静态特性。在该结构中， 在p-聚区和p-柱之间的p ⁺屏蔽区不仅保护底栅氧化物，而且保护p-聚区免受高电场的影响。与传统的SJ UMOSFET相比，该结构降低了反向恢复峰值电流（I _RR）的系数为2.58，反向恢复电荷（Q _RR）的系数为4.94。此外，总开关能量损耗降低了50.2％。