Abstract

The thermoelectric properties and crystallization kinetics of Cr_0.26Si_0.74 thin films with the thicknesses 11, 14, 21, 31, 56, 74, and 115 nm are studied. The films are produced by magnetron-assisted sputtering onto a cold substrate and, in the initial state, are amorphous in structure. During thermal annealing, the amorphous mixture transforms into a two-phase nanocrystalline composite consisting of chromium disilicide and silicon. In-situ measurements of the thermoelectric properties of the films during annealing show that the temperature of the onset of crystallization decreases, as the film thickness is decreased, whereas the crystallization rate increases. The thermopower of the nanocrystalline films decreases, as the film thickness is increased, and the thermoelectric-power factor reaches its maximum in films with a thickness of 31 nm.

中文翻译：

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Cr 0.26 Si 0.74薄膜的晶化动力学与其厚度的关系

摘要

Cr _0.26 Si _0.74的热电性能和结晶动力学研究了厚度为11、14、21、31、56、74和115 nm的薄膜。膜是通过磁控管辅助溅射法在冷基板上生产的，在初始状态下，其结构为非晶态。在热退火过程中，无定形混合物转变为由二硅化铬和硅组成的两相纳米晶体复合材料。在退火期间对膜的热电性质的原位测量表明，随着膜厚度减小，结晶开始的温度降低，而结晶速率增加。随着膜厚度的增加，纳米晶体膜的热功率降低，并且热电功率因数在厚度为31 nm的膜中达到最大值。