Abstract

Doping II–VI semiconductors and low-dimensional structures based on them by manganese leads to the effective quenching of electroluminescence and photoluminescence under the condition that the electron excitation energy of the crystal exceeds the energy of the intracenter transition of the Mn²⁺ ion E_Mn ≈ 2.1 eV. Quenching implies effective energy transfer from a photoexcited crystal to Mn²⁺ ions. Three mechanisms of such nonradiative energy transfer are possible, notably, the dipole–dipole mechanism, the exchange mechanism, and a mechanism related to the latter, which is associated with sp–d mixing. Although it is thought that the dipole–dipole mechanism is not particularly efficient because of the forbidden intracenter transition for Mn²⁺, while the dominant mechanism is the spin-dependent exchange mechanism, not all experimental facts accumulated to date confirm this conclusion. Two experimental approaches that make it possible to reveal the dominant energy-transfer mechanism to Mn²⁺ ions and evaluate the partial contributions of various mechanisms are considered in the article. One of these approaches is associated with optically detected magnetic resonance at single semimagnetic quantum dots, and the second one is associated with plasmon enhancement of the energy transfer to Mn²⁺ ions by means of the dipole–dipole interaction.

中文翻译：

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II-VI稀释磁半导体中锰离子非辐射激发的主导机理

摘要

在晶体的电子激发能超过Mn ²⁺离子E _Mn的中心内跃迁能量的条件下，锰掺杂II-VI半导体和基于它们的低维结构可有效地淬灭电致发光和光致发光≈2.1 eV。淬火意味着从光激发晶体到Mn ²⁺离子的有效能量转移。这种非辐射能量转移的三种机制是可能的，尤其是偶极-偶极子机制，交换机制以及与后者相关的机制，它们与sp - d相关联。混合。尽管人们认为由于Mn ²⁺的禁止中心内跃迁，偶极-偶极子机制并不是特别有效，而主要机制是自旋依赖性交换机制，但到目前为止，并非所有积累的实验事实都证实了这一结论。本文考虑了两种实验方法，可以揭示对Mn ²⁺离子的主要能量转移机理，并评估各种机理的部分贡献。这些方法中的一种与在单个半磁性量子点处的光学检测到的磁共振有关，而第二种与通过偶极-偶极相互作用通过等离激元增强向Mn ²⁺离子的能量转移相关。