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Planar Triode for Vacuum Microelectronics
Russian Microelectronics Pub Date : 2020-05-18 , DOI: 10.1134/s1063739720020079
S. Sh. Rekhviashvili , D. S. Gaev

Abstract

The article studies a triode for vacuum microelectronics with horizontal geometry (planar triode). A simple theoretical model of the device is proposed and the minimum cutoff voltage is calculated. Experiments are carried out on the fundamental model of the device, which qualitatively confirm the main theoretical conclusions.


中文翻译:

真空微电子平面三极管

摘要

本文研究了具有水平几何形状的真空微电子器件的三极管(平面三极管)。提出了该器件的简单理论模型,并计算了最小截止电压。对设备的基本模型进行了实验,定性地确认了主要的理论结论。
更新日期:2020-05-18
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