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Planar Triode for Vacuum Microelectronics
Russian Microelectronics Pub Date : 2020-05-18 , DOI: 10.1134/s1063739720020079 S. Sh. Rekhviashvili , D. S. Gaev
中文翻译:
真空微电子平面三极管
更新日期:2020-05-18
Russian Microelectronics Pub Date : 2020-05-18 , DOI: 10.1134/s1063739720020079 S. Sh. Rekhviashvili , D. S. Gaev
Abstract
The article studies a triode for vacuum microelectronics with horizontal geometry (planar triode). A simple theoretical model of the device is proposed and the minimum cutoff voltage is calculated. Experiments are carried out on the fundamental model of the device, which qualitatively confirm the main theoretical conclusions.中文翻译:
真空微电子平面三极管