Abstract

A simple phenomenological model for estimating a drift velocity peak in transistor heterostructures with the strong electron localization in the channel is developed using a self-consistent solution of the Schrödinger and Poisson equations and a system of hydrodynamic equations. It is shown that, when an electron enters the region of a strong field, the donor–acceptor doping increases the average drift velocity of electrons several times in the inverted heterostructures and by a factor of 1.5 in the transistor heterostructures based on the double-sided doped In_xGa_{1– x}As–Al_yGa_{1– y}As and In_xGa_{1– x}As–In_yAl_{1– y}As heterojunctions. In this case, the surface density of electrons in the double-sided doped structures can be more than doubled without a noticeable deterioration of the transport characteristics.

中文翻译：

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施主-受主晶体管异质结构中的非局部电子动力学

摘要

使用Schrödinger和Poisson方程的自洽解以及流体力学方程组，开发了一种简单的现象学模型，用于估算晶体管异质结构中具有强电子局部性的漂移速度峰值。结果表明，当电子进入强场区域时，施主-受主掺杂会在反向异质结构中使电子的平均漂移速度提高数倍，而在基于双面的晶体管异质结构中，电子的平均漂移速度将提高1.5倍掺杂In _x Ga _{1 – x} As–Al _y Ga _{1 – y} As和In _x Ga _{1 – x} As–In _y Al _{1– y}作为异质结。在这种情况下，双面掺杂结构中电子的表面密度可以增加一倍以上，而不会显着降低传输特性。