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Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance Effect
Russian Microelectronics Pub Date : 2020-03-25 , DOI: 10.1134/s1063739720010138
D. V. Vasil’ev , D. V. Kostyuk , E. P. Orlov , D. A. Zhukov , Yu. V. Kazakov , V. V. Amelichev , P. A. Belyakov

Abstract

The modern designs of magnetic field transducers (MFTs) based on nanostructures with the spin-tunnel magnetoresistive effect (STMR) and the main areas of their application are considered. The results of an experimental study of two constructive versions of magnetic field transducers with an even and odd output characteristic are presented. The sensitivity of the fabricated MFT model based on the STMR effect with an even output characteristic is 0.54 mV/(V Oe) in the range of a magnetic field with the intensity ranging from 0 to 40 Oe. The results of dependency conversion are presented. R(H) nanostructures with the STMR effect by thermomagnetic treatment to reduce hysteresis and increase linearity in the working range of the magnetic field. The sensitivity of the fabricated MFT model based on the STMR effect with an odd output characteristic is 5.4 mV/(V Oe) in the range of a magnetic field with a strength of ±1 Oe. In conclusion, promising directions of the development of magnetic field converter (MFC) structures based on nanostructures with the STMR effect are described.


中文翻译:

自旋隧道磁阻效应的磁场变换器

摘要

考虑了具有自旋隧道磁阻效应(STMR)的基于纳米结构的磁场换能器(MFT)的现代设计及其主要应用领域。给出了两个具有偶数和奇数输出特性的磁场传感器的构造型式的实验研究结果。在具有0至40 Oe的强度的磁场范围内,具有均匀输出特性的基于STMR效应的MFT模型的灵敏度为0.54 mV /(V Oe)。呈现了依赖项转换的结果。[R ħ)通过热磁处理具有STMR效应的纳米结构,以减少磁滞并增加磁场工作范围内的线性。在具有±1 Oe强度的磁场范围内,基于具有奇特输出特性的STMR效应制作的MFT模型的灵敏度为5.4 mV /(V Oe)。总之,描述了基于具有STMR效应的纳米结构的磁场转换器(MFC)结构的发展方向。
更新日期:2020-03-25
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