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Investigating the Formation of Defects in Silicon during Gamma Irradiation
Russian Microelectronics Pub Date : 2020-03-25 , DOI: 10.1134/s1063739720010114 M. A. Saurov , S. V. Bulyarskiy , A. V. Lakalin
中文翻译:
研究伽马射线辐照过程中硅中缺陷的形成
更新日期:2020-03-25
Russian Microelectronics Pub Date : 2020-03-25 , DOI: 10.1134/s1063739720010114 M. A. Saurov , S. V. Bulyarskiy , A. V. Lakalin
Abstract
The parameters of recombination centers in silicon photodiodes are studied before and after gamma irradiation. The technique of investigation is deep-level recombination spectroscopy. It is shown that, after irradiation, both the forward-bias and reverse-bias currents through the p–n junction increase, which is explained by the growth in the concentration of recombination centers due to the formation of vacancies during irradiation.中文翻译:
研究伽马射线辐照过程中硅中缺陷的形成