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Investigating the Formation of Defects in Silicon during Gamma Irradiation
Russian Microelectronics Pub Date : 2020-03-25 , DOI: 10.1134/s1063739720010114
M. A. Saurov , S. V. Bulyarskiy , A. V. Lakalin

Abstract

The parameters of recombination centers in silicon photodiodes are studied before and after gamma irradiation. The technique of investigation is deep-level recombination spectroscopy. It is shown that, after irradiation, both the forward-bias and reverse-bias currents through the p–n junction increase, which is explained by the growth in the concentration of recombination centers due to the formation of vacancies during irradiation.


中文翻译:

研究伽马射线辐照过程中硅中缺陷的形成

摘要

研究了伽马辐照前后硅光电二极管中复合中心的参数。研究的技术是深层重组光谱法。结果表明,辐照后,通过PN结的正向和反向偏置电流均增加,这可以解释为由于辐照期间空位的形成,复合中心浓度的增加。
更新日期:2020-03-25
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