Abstract—

Indium tin oxide (ITO) films grown on silicate glass substrates have been characterized by X-ray photoelectron spectroscopy (XPS). Valence band and core level XPS spectra have been used for qualitative and quantitative elemental analysis of the films before and after Ar⁺ ion etching to a depth of ~50 nm. It has been found that the densest (best quality) oxide layer was produced on the surface of sample M3, prepared at a lower pressure in comparison with the other samples and a higher discharge voltage in the magnetron plasma. Sample M2 and, to a lesser extent, sample M1 have been shown to contain constituent elements of the silicate glass substrate (Si, Al, Na, K, Ca, Mg, Fe, S, O, and C), which was due to the loose structure (poor quality) of the indium tin oxide coating on the substrate. The surface layer of the as-prepared samples contained mostly In³⁺ and Sn²⁺ ions bonded not only to oxygens of the In₂O₃ and SnO oxides but also to the oxygens of impurity hydroxyl and carbonate groups. Ar⁺ ion etching of the sample surface led to the removal of the impurities. As a result, there were mostly In³⁺ and Sn²⁺ ions bonded to oxygen in In₂O₃ and SnO.

中文翻译：

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硅酸盐玻璃表面铟锡混合氧化物的X射线光电子能谱研究

摘要—

通过X射线光电子能谱（XPS）对在硅酸盐玻璃基板上生长的铟锡氧化物（ITO）膜进行了表征。价带和核心能级XPS光谱已用于Ar ⁺之前和之后的薄膜的定性和定量元素分析离子蚀刻至〜50 nm的深度。已经发现，在样品M3的表面上产生了最致密（质量最好）的氧化物层，该样品层是在与其他样品相比较低的压力下和磁控管等离子体中较高的放电电压下制备的。样品M2和少量样品M1已显示出包含硅酸盐玻璃基板的组成元素（Si，Al，Na，K，Ca，Mg，Fe，S，O和C），这是由于基体上铟锡氧化物涂层的松散结构（质量差）。所制备样品的表面层主要包含In ³⁺和Sn ²⁺离子，不仅与In ₂ O ₃和SnO氧化物的氧键合，而且还与杂质羟基和碳酸盐基团的氧键合。氩气样品表面的⁺离子蚀刻可去除杂质。结果，在In ₂ O ₃和SnO中大部分与氧键合的In ³⁺和Sn ²⁺离子。