Abstract—

The low-temperature (80–190 K) thermoelectric power of TlCrS₂ has been shown to follow the relation α(T) = (0.2T – 13) μV/K, characteristic of charge transport through localized states in the band gap. As the temperature is raised from 338 to 370 K, where the electrical conductivity is dominated by charge carriers excited to the allowed band, the thermoelectric power varies of TlCrS₂ is inversely proportional to temperature. The temperature coefficient of the activation energy for conduction in TlCrS₂ is γ = 2.06 × 10^–4 eV/K. We have determined parameters of localized states in TlCrS₂.

中文翻译：

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TlCrS 2中的跳跃热电功率

摘要—

已经证明，TlCrS ₂的低温（80–190 K）热电功率遵循以下关系式：α（T）=（0.2 T – 13）μV/ K，这是电荷通过带隙中的局部状态传输的特性。随着温度从338 K升高到370 K，其中电导率受激发到允许带的电荷载流子控制，TlCrS ₂的热电功率变化与温度成反比。TlCrS _2中用于传导的活化能的温度系数为γ= 2.06×10 ^–4 eV / K。我们已经确定了TlCrS ₂中局部状态的参数。