SnS is an earth-abundant, non-toxic, and low-cost absorber material for solar cell applications. In this work, the physical properties of SnS thin films and efficiency of SnS solar cells were investigated for different tin metal layer thicknesses of 300 nm (Sn-300), 500 nm (Sn-500), and 700 nm (Sn-700) deposited by DC sputtering followed by the sulfurization using effusion cell evaporation method. The XRD and Raman characterizations confirmed the formation of single-phase SnS compound with orthorhombic structure for the case of Sn-500. The sulfurized films of Sn-500 had remarkable and homogeneous morphology with the optical band gap energy of 1.35 eV. The fabricated device showed an efficiency of 0.74% with an open-circuit voltage of 267mV, short circuit current density of 8.47 mA/cm 2 , and fill factor of 54.16. By varying the different metal tin layer thicknesses, this is the first report with device efficiency for SnS solar cells grown via effusion cell evaporation technique.

中文翻译：

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溅射和扩散电池蒸发生长的 SnS 太阳能电池的性能研究

SnS 是一种地球上丰富的、无毒的、低成本的太阳能电池应用吸收材料。在这项工作中，研究了 300 nm (Sn-300)、500 nm (Sn-500) 和 700 nm (Sn-700) 不同锡金属层厚度的 SnS 薄膜的物理性质和 SnS 太阳能电池的效率通过直流溅射沉积，然后使用渗漏池蒸发法硫化。XRD 和拉曼表征证实了在 Sn-500 的情况下形成了具有正交结构的单相 SnS 化合物。Sn-500 的硫化膜具有显着且均匀的形态，光学带隙能量为 1.35 eV。制造的器件显示效率为 0.74%，开路电压为 267mV，短路电流密度为 8.47 mA/cm 2 ，填充因子为 54.16。