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Distributed Spintronic/CMOS Sensor Network for Thermal-Aware Systems
IEEE Transactions on Very Large Scale Integration (VLSI) Systems ( IF 2.8 ) Pub Date : 2020-06-01 , DOI: 10.1109/tvlsi.2020.2981443
Abdelrahman G. Qoutb , Eby G. Friedman

Recent developments in IC technology rely on device scaling and 3-D integration, resulting in billions of devices compacted into a small area. These trends degrade the lifetime and reliability of the system due to an increase in temperature caused by high power densities. Dynamically managing a system based on the thermal characteristics is important to mitigate this issue. An on-chip thermal-aware system composed of hundreds of distributed thermal sensors is proposed. A hybrid spintronic/CMOS-based thermal sensor is described that exploits the thermal response and small area of an antiparallel magnetic tunnel junction. The sensor cell consumes as little as 500 pJ to read 1024 thermal sensor nodes and generates a thermal map of a system composed of $32 \times 32$ thermal sensors. The sensor cell exhibits a thermal linearity ( $R^{2}$ ) up to 0.983 and a thermal sensitivity of 1.91 mV/K over the commercial temperature range of 0 °C to 85 °C while consuming $32~\mu \text{W}$ .

中文翻译:

用于热感知系统的分布式自旋电子/CMOS 传感器网络

IC 技术的最新发展依赖于器件缩放和 3-D 集成,从而将数十亿个器件压缩到一个小区域中。由于高功率密度导致温度升高,这些趋势会降低系统的使用寿命和可靠性。根据热特性动态管理系统对于缓解此问题非常重要。提出了一种由数百个分布式热传感器组成的片上热感知系统。描述了一种基于混合自旋电子学/CMOS 的热传感器,它利用了反平行磁隧道结的热响应和小面积。传感器单元仅消耗 500 pJ 即可读取 1024 个热传感器节点,并生成由以下组成的系统的热图 $32 \times 32$ 热传感器。传感器单元表现出热线性( $R^{2}$ ) 在 0 °C 至 85 °C 的商业温度范围内高达 0.983 和 1.91 mV/K 的热灵敏度,同时消耗 $32~\mu \text{W}$ .
更新日期:2020-06-01
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