The effect of tin-oxide (SnO) nanoparticles, which are obtained by indium-tin-oxide (ITO) treatment, on the p-GaN surface of GaN-based flip-chip blue micro-light-emitting diode (μ-LED) arrays is investigated. A thin Ag layer is deposited on the ITO-treated p-GaN surface by sputtering. SnO nanoparticles originate from inhomogeneous Schottky barrier heights (SBHs) at Ag/p-GaN contact. Therefore, effective SBH is reduced, which causes carrier transport into the μ-LED to enhance. 10 nm thick ITO-treated μ-LEDs show better optoelectronic characteristics among fabricated μ-LEDs owing to improved ohmic contact and highly reflective p-type reflectors. Basically, SnO nanoparticles help to make good ohmic contact, which results in improved carrier transport into μ-LEDs and thus results in increased optoelectronic performances.

中文翻译：

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氧化锡纳米粒子通过产生非均匀肖特基势垒高度对改善 InGaN/GaN 微型发光二极管 Ag/p-GaN 界面载流子传输的影响

通过氧化铟锡 (ITO) 处理获得的氧化锡 (SnO) 纳米颗粒对 GaN 基倒装芯片蓝色微型发光二极管 (μ-LED) 的 p-GaN 表面的影响数组进行了调查。通过溅射在经过 ITO 处理的 p-GaN 表面上沉积一层薄的 Ag 层。SnO 纳米颗粒源自 Ag/p-GaN 接触处的不均匀肖特基势垒高度 (SBH)。因此，有效SBH降低，导致载流子传输到μ-LED中增强。由于改进的欧姆接触和高反射 p 型反射器，10 nm 厚的 ITO 处理的 μ-LED 在制造的 μ-LED 中显示出更好的光电特性。基本上，SnO 纳米颗粒有助于形成良好的欧姆接触，从而改善载流子向 μ-LED 的传输，从而提高光电性能。