Abstract The quaternary gallium-rich intermetallic phases RE2Pt3Ga4In with RE = Y and Gd-Tm were synthesized by arc-melting of the elements and subsequent annealing. Small single crystals were obtained by high-frequency annealing of the samples in sealed tantalum ampoules. The polycrystalline samples were characterized through their X-ray powder patterns. The RE2Pt3Ga4In phases crystallize with a site ordering variant of the orthorhombic Y2Rh3Sn5 type, space group Cmc 21. The structures of Gd2Pt3Ga4In, Dy2Pt3Ga4.14In0.86, Er2Pt3Ga4.17In0.83 and Tm2Pt3Ga4.21In0.79 were refined from single-crystal X-ray diffraction data. The single crystals reveal small homogeneity ranges RE2Pt3Ga4±xIn1±x. The striking geometrical structural building units are slightly distorted trigonal prisms around the three crystallographically independent platinum atoms: Pt1@RE4Ga2, Pt2@RE2Ga4 and Pt3@RE2Ga2In2. Based on these prismatic building units, the RE2Pt3Ga4In structures can be described as intergrowth variants of TiNiSi and NdRh2Sn4 related structural slabs. Temperature dependent magnetic susceptibility studies of Gd2Pt3Ga4In and Tb2Pt3Ga4In show Curie-Weiss behavior and the experimental magnetic moments confirm stable trivalent gadolinium respectively terbium. Gd2Pt3Ga4In and Tb2Pt3Ga4In order antiferromagnetically at TN = 15.8(1) and 26.0(1) K. Magnetization curves at 3 K show field-induced spin reorientations.

中文翻译：

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四元金属间化合物 RE2Pt3Ga4In (RE=Y, Gd-Tm) – NdRh2Sn4 和 TiNiSi 相关板坯的共生结构

摘要 通过元素的电弧熔化和后续退火合成了RE = Y和Gd-Tm的四元富镓金属间相RE2Pt3Ga4In。通过对密封钽安瓿中的样品进行高频退火，得到小的单晶。多晶样品通过它们的 X 射线粉末图案进行表征。RE2Pt3Ga4In 相结晶为正交 Y2Rh3Sn5 型的位点排列变体，空间群为 Cmc 21。Gd2Pt3Ga4In、Dy2Pt3Ga4.14In0.86、Er2Pt3Ga4.17In0.83 和 Tm29Pt3-Ga4-In0.83 和 Tm29-Pt3-Ga4-In 单晶结构射线衍射数据。单晶显示小的同质性范围 RE2Pt3Ga4±xIn1±x。引人注目的几何结构建筑单元是围绕三个晶体学独立的铂原子略微扭曲的三棱柱：Pt1@RE4Ga2、Pt2@RE2Ga4 和 Pt3@RE2Ga2In2。基于这些棱柱形建筑单元，RE2Pt3Ga4In 结构可以描述为 TiNiSi 和 NdRh2Sn4 相关结构板的共生变体。Gd2Pt3Ga4In 和 Tb2Pt3Ga4In 的温度相关磁化率研究显示了居里-魏斯行为，实验磁矩证实了稳定的三价钆和铽。Gd2Pt3Ga4In 和 Tb2Pt3Ga4In 在 TN = 15.8(1) 和 26.0(1) K 处以反铁磁性顺序排列。 3 K 处的磁化曲线显示场诱导的自旋重定向。Gd2Pt3Ga4In 和 Tb2Pt3Ga4In 的温度相关磁化率研究显示了居里-魏斯行为，实验磁矩证实了稳定的三价钆和铽。Gd2Pt3Ga4In 和 Tb2Pt3Ga4In 在 TN = 15.8(1) 和 26.0(1) K 处以反铁磁性顺序排列。 3 K 处的磁化曲线显示场诱导的自旋重定向。Gd2Pt3Ga4In 和 Tb2Pt3Ga4In 的温度相关磁化率研究显示了居里-魏斯行为，实验磁矩证实了稳定的三价钆和铽。Gd2Pt3Ga4In 和 Tb2Pt3Ga4In 在 TN = 15.8(1) 和 26.0(1) K 处以反铁磁性顺序排列。 3 K 处的磁化曲线显示场诱导的自旋重定向。