Abstract Single-crystal copper films on sapphire have recently been reported upon in relation to graphene growth on these films. In the present paper the kinetics of the formation of single crystal copper films is investigated. We demonstrate the importance of heating the sapphire substrate in 1000 hPa oxygen, followed by a fast cooling prior to depositing the copper film. The importance of this treatment is tentatively explained by the dissolution of oxygen in sapphire and subsequent out-diffusion during recrystallization of the copper film to form a copper-oxide interface layer. Also, the importance of avoiding oxygen incorporation in the sputter deposited film is demonstrated.

中文翻译：

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蓝宝石上的单晶铜膜

摘要 最近报道了蓝宝石上的单晶铜膜与这些膜上的石墨烯生长有关。在本文中，研究了单晶铜膜形成的动力学。我们证明了在 1000 hPa 氧气中加热蓝宝石衬底的重要性，然后在沉积铜膜之前进行快速冷却。这种处理的重要性可以通过氧在蓝宝石中的溶解和随后的铜膜再结晶过程中的外扩散来初步解释，以形成氧化铜界面层。此外，还证明了避免在溅射沉积膜中掺入氧的重要性。