Systematic Raman spectroscopic study was conducted on the wurtzite (002) Sb-doped ZnO films grown by pulsed laser deposition with different Sb doping levels and annealed at different temperatures, with the undoped, Cu-doped and Ga-doped ZnO films for comparison. Three additional Raman modes 235 cm⁻¹, 510 cm⁻¹ and 534 cm⁻¹ were observed only in the Sb-doped ZnO samples but not in the other controls. The vibration mode 235 cm⁻¹was associated with the Sb_Zn-related shallow donor, which was the origin of the n⁺-conductivity. The 510 cm⁻¹ vibrational mode has been associated with H_O in previous literature. However in the current study, the correlation between its intensity and the H abundance was not observed. The 534 cm⁻¹ Raman mode was associated with a Sb-related defect. The variation of the intensities of the Raman modes 235 cm⁻¹ and 510 cm⁻¹ upon annealing and change of Sb composition were discussed.

对通过脉冲激光沉积以不同的Sb掺杂水平生长并在不同温度下退火的纤锌矿（002）掺杂Sb的ZnO膜进行了系统拉曼光谱研究，并与未掺杂，Cu掺杂和Ga掺杂的ZnO膜进行了比较。三个额外的拉曼模式235厘米^-1，510厘米^-1和534厘米^-1只观察到的锑掺杂的ZnO样品中但不存在于其他控件。235 cm ^-1的振动模式与Sb _Zn相关的浅施主相关，这是n ⁺导电性的起源。510 cm ^-1振动模式与H _O有关在以前的文献中。然而，在目前的研究中，未观察到其强度与H丰度之间的相关性。534 cm ^-1拉曼模式与Sb相关缺陷有关。讨论了拉曼模式235 cm ^-1和510 cm ^-1在退火和Sb组成变化时强度的变化。