Radiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Then, thermal annealing was carried out at 120°C. We found that the proportion of defect recovery after annealing decreases with increasing irradiation fluence. The minority carrier lifetime increases with decreasing defect concentration, which means that the electrical performance of the solar cell is improved. We calculated the defect concentration and minority carrier lifetime with numerical simulation and modeled an improved annealing kinetic equation with experimental results.

中文翻译：

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GaAs/Ge太阳能电池150 keV质子辐照后的退火效应

辐射引起的缺陷是造成太阳能电池退化的原因。本文模拟和分析了辐射和退火对 GaAs/Ge 太阳能电池缺陷的影响。检查了用 150 keV 质子照射的太阳能电池的电性能和光谱响应。然后，在120℃下进行热退火。我们发现退火后缺陷恢复的比例随着辐照通量的增加而降低。少数载流子寿命随着缺陷浓度的降低而增加，这意味着太阳能电池的电性能得到改善。我们通过数值模拟计算了缺陷浓度和少数载流子寿命，并用实验结果模拟了改进的退火动力学方程。