This paper is about analyzing millimeter wave probe signal (150 GHz) differential absorption datasets to reveal some changed transmission and reflection properties of 500 µm p-doped Si wafers exposed to 1.2, 2.0, and 0.75 MeV gamma, proton, and chlorine ion beams (with doses in range 0.1 to 6 MGy). The decay portion of the respective pristine and irradiated sample RF responses were tri-exponentially fitted, and respective time constants evaluated as function of radiation dose. The peak RF voltages and their ratio with the transmitted DC voltages at each of the 532 nm laser radiation fluence points were plotted as function of laser radiation itself. Radiation dose is found to enhance the third time constant τ₃ that decays very fast beyond 0.1 MGy. Average τ for all irradiated samples correlates negatively with radiation dose (R = −0.83). 4-probe resistivity of 2 MeV H⁺ exposed samples increase ~10x and enhances the peak RF voltage to DC voltage ratio (ΔV_T/V_dc). Chlorine (Cl²⁺) irradiated Si wafers show feeble ΔV_T/V_dc compared to those exposed with γ or H⁺ beam. DC transmittances of all samples at 150 GHz lie in the range 0.46–0.64.

本文旨在分析毫米波探针信号（150 GHz）的差分吸收数据集，以揭示暴露于1.2、2.0和0.75 MeVγ，质子和氯离子束的500 µm p掺杂Si晶片的某些透射和反射特性发生了变化（剂量范围为0.1至6 MGy）。原始的和辐射的样品RF响应的衰减部分进行了三指数拟合，并根据辐射剂量对相应的时间常数进行了评估。分别绘制了在532 nm激光辐射通量点处的峰值RF电压及其与传输的DC电压之比，作为激光辐射本身的函数。辐射剂量被发现，以增强所述第三时间常数τ ₃衰减超过0.1 MGy的速度非常快。所有辐射样品的平均τ与辐射剂量呈负相关（R = -0.83）。2MeV的H的4探针电阻率⁺暴露的样品增加10倍〜并提高了峰值RF电压为直流电压比（ΔV _Ť / V _DC）。氯（Cl ^{2 +}）照射的Si晶片显示微弱ΔV _Ť / V _DC相比，那些用γ或H暴露⁺光束。所有样品在150 GHz时的直流透射率在0.46-0.64范围内。