Abstract In the paper, the results of the study on how etching type influences the quality of mesa structures in discrete antimonide-based photodetectors are presented. Devices based on both symmetrical and asymmetrical InAs/GaSb type-II superlattices (T2SLs) designed for mid- (MWIR) and long-wavelength infrared spectral range, respectively were tested. Mesa structures were formed using photolithography followed by wet or inductively coupled plasma – reactive ion etching. The former was based on H3PO4:C4H6O6:H2O:H2O2 solution, and dry etching was performed in BCl3:Ar plasma. The quality of mesas was evaluated using a scanning electron microscope. The current-voltage characteristics of MWIR photodetectors based on the symmetric T2SL show significantly lower leakage currents for plasma etched devices.

中文翻译：

---

台面蚀刻方法对红外光电探测器电流-电压特性的影响

摘要 本文介绍了刻蚀类型如何影响离散锑化物基光电探测器中台面结构质量的研究结果。测试了基于对称和非对称 InAs/GaSb II 型超晶格 (T2SL) 的器件，分别设计用于中波长 (MWIR) 和长波长红外光谱范围。台面结构是使用光刻法形成的，然后是湿法或电感耦合等离子体 - 反应离子蚀刻。前者基于 H3PO4:C4H6O6:H2O:H2O2 溶液，在 BCl3:Ar 等离子体中进行干蚀刻。使用扫描电子显微镜评估台面的质量。基于对称 T2SL 的 MWIR 光电探测器的电流-电压特性表明，等离子体蚀刻器件的漏电流显着降低。