A numerical investigation on the nonlinear optical rectification, second and third harmonic generation coefficients in asymmetric double n-type \(\delta \)-doped GaAs quantum well is performed in order to identify the influence of non-resonant intense laser radiation, doping concentration and the change in well widths. The energy eigenvalues and the corresponding eigenfunctions are determined by using effective-mass and parabolic band approximations. The working analytical expressions for the optical coefficients are derived from the iterative solving of compact-density matrix description of dielectric susceptibility. The obtained results reveal that the position and amplitude of the nonlinear optical rectification, second and third harmonic generation coefficients can be altered by modifying the external field as well as the compositional and geometrical setups.

非对称双n型\（\ delta \）中非线性光学整流，二次谐波和三次谐波产生系数的数值研究为了确定非共振强激光辐射，掺杂浓度和阱宽度变化的影响，进行了掺杂GaAs的量子阱。通过使用有效质量和抛物线能带近似来确定能量特征值和相应的特征函数。光学系数的工作解析表达式是从对介电常数的紧凑密度矩阵描述的迭代求解中得出的。获得的结果表明，可以通过修改外部场以及成分和几何设置来更改非线性光学整流的位置和幅度，二次谐波和三次谐波的产生系数。