A great deal of work is currently devoted to the development of new semiconductor alloys that can expand the range of material properties and device applications. Although group‐III nitride alloys are attractive materials owing to the wide range of tunable direct bandgaps and other suitable properties, the material choices are limited to only a few binary and ternary alloys. This situation is due in part to the limitations of the conventional deposition methods, such as chemical vapor deposition, requiring high temperature and high pressure to synthesize a wider range of metastable alloys. In this context, the synthesis of previously unreported quaternary nitride alloys including Mg—(InGaMg)N—is presented. These alloys, with a tunable bandgap and good crystallinity, extend the group of the materials that may be suitable for the fabrication of optoelectronic devices. The method is based on the conventional plasma‐assisted molecular beam epitaxy (PA‐MBE), using a flux‐modulation technique to enable the incorporation of all elements reaching the growth surface. In addition to detailed experimental characterization of structural and optical properties of the Mg containing nitride alloys, computations on their electronic band structures are also carried out.

中文翻译：

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等离子体辅助分子束外延法合成含镁的新型氮化物合金

当前，大量工作致力于新型半导体合金的开发，可以扩大材料性能和器件应用范围。尽管由于可调节的直接带隙范围广和其他合适的性能，Ⅲ族氮化物合金是有吸引力的材料，但是材料的选择仅限于几种二元和三元合金。这种情况部分是由于常规沉积方法的局限性，例如化学气相沉积，需要高温和高压才能合成范围更广的亚稳合金。在这种情况下，提出了以前未报告的包括Mg-（InGaMg）N-的季铵氮化物合金的合成。这些合金具有可调的带隙和良好的结晶度，扩展了可能适合制造光电器件的材料组。该方法基于常规的等离子体辅助分子束外延（PA‐MBE），并使用通量调制技术来整合所有到达生长表面的元素。除了对含镁的氮化物合金的结构和光学性质进行详细的实验表征外，还对其电子能带结构进行了计算。