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Excitation Light Energy Dependence of Silver Photodiffusion into Amorphous Germanium Sulfide: Neutron and X‐Ray Reflectivity and X‐Ray Diffraction
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.6 ) Pub Date : 2020-05-30 , DOI: 10.1002/pssb.202000178
Yoshifumi Sakaguchi 1 , Takayasu Hanashima 1 , Al-Amin Ahmed Simon 2 , Maria Mitkova 2
Affiliation  

Silver photodiffusion into amorphous chalcogenides is the photoinduced phenomenon, in which mobile Ag ions are injected into semiconductor films, and is applicable to nonvolatile memory devices. To understand the role of light illumination in the silver diffusion into a chalcogenide layer, the excitation light energy dependence of silver photodiffusion in Ag/a‐Ge20S80/Si substrate stacks is investigated by neutron reflectivity, X‐ray reflectivity, and X‐ray diffraction. The measurements reveal that there is an energy threshold to induce silver photodiffusion, which corresponds to the optical gap of amorphous Ge20S80. The excitation of the lone‐pair electrons to the antibonding states by the light illumination with greater energy than the optical gap leads to the bond breaking, and the Ge–S network structure is reorganized involving Ag ions.

中文翻译:

银光扩散到非晶态硫化锗中的激发光能依赖性:中子和X射线反射率和X射线衍射

银光扩散到非晶硫族化物中是一种光诱导现象,其中将可移动的Ag离子注入到半导体膜中,并且适用于非易失性存储器件。为了了解光照射在银扩散到硫族化物层中的作用,通过中子反射率,X射线反射率和X研究了Ag / a-Ge 20 S 80 / Si衬底堆叠中银光扩散的激发光能量依赖性。射线衍射。测量结果表明,存在诱导银光扩散的能量阈值,该阈值对应于非晶Ge 20 S 80的光学间隙。能量大于光隙的光照射将孤对电子激发成反键态会导致键断裂,并且重组了涉及Ag离子的Ge–S网络结构。
更新日期:2020-05-30
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