Abstract Sn–Ga co-doped ZnO films with different proportions synthesized by the sol-gel spin-coating technique have been investigated for their microstructural, optical, luminescence, and electrical properties using a variety of characterization techniques. All the films exhibit c-axis orientation along the (0 0 2) plane having a hexagonal wurtzite structure of zinc oxide. The crystallinity of the films improves upon doping and co-doping. Morphological images reveal that the films possess the granular morphologies with varying features. The co-doped films have a higher root mean square (RMS) roughness in comparison to the undoped and doped ZnO films. In general, relative to the undoped film, the transmittance of the film improves upon doping and co-doping. The direct energy band-gap has a maximum value of 3.26 eV for the undoped ZnO film, which decreases upon doping and co-doping. In the visible region, the refractive index exhibits a minimum value of 2.12 for the 1T3GZO film at the wavelength of 600 nm. The photoluminescence spectra of the films consist of one near-band edge (NBE) emission peak related to the recombination of free excitons, and a few broad emission peaks linked to the native defects in the films. Among the co-doped ZnO films, the 1 at% Sn–Ga co-doped film (1T1GZO) has the optimum transmittance and electrical conductivity.

中文翻译：

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溶胶-凝胶衍生的 ZnO 薄膜中的 Sn-Ga 共掺杂：研究其微观结构、光学、发光和电学特性

摘要 已经使用各种表征技术研究了通过溶胶-凝胶旋涂技术合成的不同比例的 Sn-Ga 共掺杂 ZnO 薄膜的微观结构、光学、发光和电学性能。所有的薄膜都表现出沿具有氧化锌六方纤锌矿结构的（0 0 2）面的c轴取向。薄膜的结晶度在掺杂和共掺杂后得到改善。形态学图像显示薄膜具有具有不同特征的颗粒状形态。与未掺杂和掺杂的 ZnO 薄膜相比，共掺杂薄膜具有更高的均方根 (RMS) 粗糙度。一般而言，相对于未掺杂的薄膜，掺杂和共掺杂后薄膜的透射率有所提高。对于未掺杂的 ZnO 薄膜，直接能带隙的最大值为 3.26 eV，在掺杂和共掺杂时减少。在可见光区，1T3GZO 薄膜的折射率在 600 nm 波长处的最小值为 2.12。薄膜的光致发光光谱由一个与自由激子复合相关的近带边缘 (NBE) 发射峰和一些与薄膜中的天然缺陷相关的宽发射峰组成。在共掺杂的 ZnO 薄膜中，1 at% Sn-Ga 共掺杂薄膜 (1T1GZO) 具有最佳的透射率和电导率。以及一些与薄膜中的天然缺陷相关的宽发射峰。在共掺杂的 ZnO 薄膜中，1 at% Sn-Ga 共掺杂薄膜 (1T1GZO) 具有最佳的透射率和电导率。以及一些与薄膜中的天然缺陷相关的宽发射峰。在共掺杂的 ZnO 薄膜中，1 at% Sn-Ga 共掺杂薄膜 (1T1GZO) 具有最佳的透射率和电导率。