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Increasing the internal quantum efficiency of green GaN-based light-emitting diodes by employing graded quantum well and electron blocking layer
Optical and Quantum Electronics ( IF 3 ) Pub Date : 2020-05-30 , DOI: 10.1007/s11082-020-02423-4 Muhammad Usman , Abdur-Rehman Anwar , Munaza Munsif , Shahzeb Malik , Noor Ul Islam , Tariq Jameel
Optical and Quantum Electronics ( IF 3 ) Pub Date : 2020-05-30 , DOI: 10.1007/s11082-020-02423-4 Muhammad Usman , Abdur-Rehman Anwar , Munaza Munsif , Shahzeb Malik , Noor Ul Islam , Tariq Jameel
By numerical investigation of various structures, we have proposed a promising single quantum well device for efficient green InGaN-based light-emitting diodes. The peak internal quantum efficiency of the proposed structure, at lower current density, is enhanced and shows significant droop reduction at high current density. The efficiency droop ratio of the proposed structure is ~ 31% at 100 A cm −2 . Similarly, the light output power is also doubled as compared to conventional light-emitting diode. In the proposed structure, the simultaneously graded quantum well and electron blocking layer are employed. Therefore, the injection of holes into the active region becomes easier due to graded electron blocking layer and radiative recombination is boosted due to graded quantum well. By implement the proposed structure, both the problem of injection of holes and separation of electron–hole wavefunctions are greatly reduced.
中文翻译:
采用梯度量子阱和电子阻挡层提高绿色GaN基发光二极管的内量子效率
通过对各种结构的数值研究,我们提出了一种用于高效绿色 InGaN 基发光二极管的有前途的单量子阱器件。所提出结构的峰值内量子效率在较低电流密度下得到增强,并在高电流密度下显着降低。在 100 A cm -2 下,所提出结构的效率下降率为~31%。同样,光输出功率也比传统的发光二极管增加了一倍。在所提出的结构中,采用了同时渐变的量子阱和电子阻挡层。因此,由于梯度电子阻挡层,空穴注入有源区变得更容易,并且由于梯度量子阱,辐射复合得到增强。通过实施提议的结构,
更新日期:2020-05-30
中文翻译:
采用梯度量子阱和电子阻挡层提高绿色GaN基发光二极管的内量子效率
通过对各种结构的数值研究,我们提出了一种用于高效绿色 InGaN 基发光二极管的有前途的单量子阱器件。所提出结构的峰值内量子效率在较低电流密度下得到增强,并在高电流密度下显着降低。在 100 A cm -2 下,所提出结构的效率下降率为~31%。同样,光输出功率也比传统的发光二极管增加了一倍。在所提出的结构中,采用了同时渐变的量子阱和电子阻挡层。因此,由于梯度电子阻挡层,空穴注入有源区变得更容易,并且由于梯度量子阱,辐射复合得到增强。通过实施提议的结构,