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Compact Passively Q -Switched Ho:Sc 2 SiO 5 Microchip Laser with a Few-Layer Molybdenum Disulfide Saturable Absorber
Journal of Russian Laser Research ( IF 0.9 ) Pub Date : 2020-05-30 , DOI: 10.1007/s10946-020-09868-8
Xiaoyu Liu , Zhongcheng Wang , Jinqiannan Zhang

We present a passively Q-switched Ho:Sc2SiO5 microchip laser with a molybdenum disulfide saturable absorber for the first time. The molybdenum disulfide materials are fabricated on the end surface of a microchip Ho:SSO crystal. The physical length of the laser cavity is only 3 mm. Three output couplers with different transmissions are utilized to test the passively Q-switched laser performance. The maximum output power is 269.3 mW, under 4.1 W incident power, when the repetition rate is 112.8 kHz, this means that the single pulse energy is 2.39 μJ. The shortest pulsed time duration is 167.4 ns, corresponding to maximum peak power of 14.3 W. The M2 factor of the passively Q-switched microchip Ho:SSO laser is measured to be 1.17.

中文翻译:

紧凑型无源Q开关Ho:Sc 2 SiO 5微型激光器,具有很少的二硫化钼饱和吸收剂

我们首次提出了具有二硫化钼可饱和吸收剂的无源Q开关Ho:Sc 2 SiO 5微芯片激光器。二硫化钼材料是在微芯片Ho:SSO晶体的端面上制造的。激光腔的物理长度仅为3毫米。利用具有不同透射率的三个输出耦合器来测试被动调Q激光器的性能。的最大输出功率是269.3毫瓦,下4.1W¯¯入射功率,当重复率是112.8千赫,这意味着单脉冲能量是2.39 μ J.最短脉冲持续时间是167.4纳秒,对应于14.3最大峰值功率W.被动Q的M2因子开关微芯片Ho:SSO激光的测量结果为1.17。
更新日期:2020-05-30
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