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Photoreflectance in Monolayer Mesoporous Silicon Structures
Journal of Russian Laser Research ( IF 0.9 ) Pub Date : 2020-05-30 , DOI: 10.1007/s10946-020-09866-w Lev P. Avakyants , Sergey E. Svyakhovskiy , Artem E. Aslanyan , Anatoliy V. Chervyakov
Journal of Russian Laser Research ( IF 0.9 ) Pub Date : 2020-05-30 , DOI: 10.1007/s10946-020-09866-w Lev P. Avakyants , Sergey E. Svyakhovskiy , Artem E. Aslanyan , Anatoliy V. Chervyakov
For the first time, we obtained the photoreflectance spectra in single-layer samples of porous silicon with 13 μm thick in the 550–1000 nm spectral region. To describe the observed reflection and photoreflectance spectra, we use a theory of multiple-beam interference, taking into account the strong absorption of Si in this spectral region. We show that, under the action of a laser radiation with a wavelength 532 nm of 30 mW power and pulse duration 3 ms, the change in the refractive index δn reaches values of the order of 10−5, and this takes place due to the thermal nonlinearity of the refractive index. We show that photoreflectance spectroscopy can be used to measure the thermo-optic coefficients of porous silicon.
中文翻译:
单层介孔硅结构中的光反射
对于第一次,我们获得的多孔硅的单层样品中的光反射谱与13 μ M在该550-1000纳米光谱区域厚。为了描述观察到的反射光谱和光反射光谱,我们使用了多光束干涉理论,并考虑了该光谱区域中Si的强吸收性。我们显示,一个激光辐射具有30个毫瓦的功率和脉冲持续时间为3ms的波长532纳米,在折射率变化的作用下ΔN 10的顺序的下游值- 5,并且这发生由于折射率的热非线性。我们表明光反射光谱法可以用来测量多孔硅的热光系数。
更新日期:2020-05-30
中文翻译:
单层介孔硅结构中的光反射
对于第一次,我们获得的多孔硅的单层样品中的光反射谱与13 μ M在该550-1000纳米光谱区域厚。为了描述观察到的反射光谱和光反射光谱,我们使用了多光束干涉理论,并考虑了该光谱区域中Si的强吸收性。我们显示,一个激光辐射具有30个毫瓦的功率和脉冲持续时间为3ms的波长532纳米,在折射率变化的作用下ΔN 10的顺序的下游值- 5,并且这发生由于折射率的热非线性。我们表明光反射光谱法可以用来测量多孔硅的热光系数。