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Photoreflectance in Monolayer Mesoporous Silicon Structures
Journal of Russian Laser Research ( IF 0.9 ) Pub Date : 2020-05-30 , DOI: 10.1007/s10946-020-09866-w
Lev P. Avakyants , Sergey E. Svyakhovskiy , Artem E. Aslanyan , Anatoliy V. Chervyakov

For the first time, we obtained the photoreflectance spectra in single-layer samples of porous silicon with 13 μm thick in the 550–1000 nm spectral region. To describe the observed reflection and photoreflectance spectra, we use a theory of multiple-beam interference, taking into account the strong absorption of Si in this spectral region. We show that, under the action of a laser radiation with a wavelength 532 nm of 30 mW power and pulse duration 3 ms, the change in the refractive index δn reaches values of the order of 105, and this takes place due to the thermal nonlinearity of the refractive index. We show that photoreflectance spectroscopy can be used to measure the thermo-optic coefficients of porous silicon.

中文翻译:

单层介孔硅结构中的光反射

对于第一次,我们获得的多孔硅的单层样品中的光反射谱与13 μ M在该550-1000纳米光谱区域厚。为了描述观察到的反射光谱和光反射光谱,我们使用了多光束干涉理论,并考虑了该光谱区域中Si的强吸收性。我们显示,一个激光辐射具有30个毫瓦的功率和脉冲持续时间为3ms的波长532纳米,在折射率变化的作用下ΔN 10的顺序的下游值- 5,并且这发生由于折射率的热非线性。我们表明光反射光谱法可以用来测量多孔硅的热光系数。
更新日期:2020-05-30
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