The electron density distribution and average electron temperature distribution in reactive ion etching (RIE) chamber are of great significance for the ionization and excitation reaction rate. The uniformity of radial distributions of the electron density and average electron temperature in the discharge chamber greatly affects the uniformity of the etching, especially the plasma etching of large area SiO₂ substrates. We study the effects of discharge conditions (including power and pressure) on the electron density and average electron temperature of plasma-etched 400 mm SiO₂ substrates in the reactive ion etching chamber; the simulation results show that the allowable major discharge conditions strongly affect the characteristics of plasma in the large area reactive ion etching chamber. Specifically, with increase in the power both the electron density and average electron temperature increase, being accompanied by deteriorating uniformity of their radial distributions. As the pressure increases, the electron density increases but average electron temperature decreases, being accompanied by deteriorating uniformity of their radial distributions. These methods and conclusions can provide reference for the improvement of cavity structure and large area RIE equipment designing and selection of the process parameters.

中文翻译：

---

大面积SiO 2衬底等离子体刻蚀的放电特性模拟

反应离子刻蚀室中的电子密度分布和平均电子温度分布对于电离和激发反应速率具有重要意义。放电室中电子密度和平均电子温度的径向分布的均匀性极大地影响了蚀刻的均匀性，特别是大面积SiO ₂衬底的等离子体蚀刻。我们研究放电条件（包括功率和压力）对等离子刻蚀的400 mm SiO ₂的电子密度和平均电子温度的影响反应离子蚀刻室中的基板；仿真结果表明，允许的主要放电条件强烈影响大面积反应离子刻蚀腔室中等离子体的特性。具体地，随着功率的增加，电子密度和平均电子温度都增加，同时其径向分布的均匀性变差。随着压力增加，电子密度增加，但平均电​​子温度降低，随之而来的是径向分布的均匀性变差。这些方法和结论可为改进型腔结构和大面积RIE设备的设计以及工艺参数的选择提供参考。