We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by molecular beam epitaxy on GaSb substrates. Collector, quantum well, and emitter regions are comprised of the lattice-matched quaternary semiconductor Ga_0.64In_0.36As_0.33Sb_0.67. Photoluminescence emission spectra reveal a direct bandgap semiconductor with a bandgap energy of $E_g\approx 0.37$ eV, which corresponds to a cut-off wavelength of $\lambda \approx 3.3$ μm. The composition-dependent bandgap energy is found to follow Shim’s model. At room temperature, we observe resonance current densities of $j_{res}=0.143$ kA cm⁻² with peak-to-valley current ratios of up to $PVCR=6.2$. At cryogenic temperatures $T<50$ K, the peak-to-valley current ratio increases up to $PVCR=16$.

中文翻译：

---

AlSb / GaInAsSb双势垒量子阱中电子的共振隧穿

我们已经研究了n型AlSb / GaInAsSb双势垒量子阱共振隧穿二极管（RTDs）的光学和电子传输特性。通过分子束外延在GaSb衬底上生长RTD。集电极区，量子阱区和发射极区由晶格匹配的四元半导体Ga _0.64 In _0.36 As _0.33 Sb _0.67组成。光致发光发射光谱揭示了带隙能为的直接带隙半导体${Ë}_G\approx 0.37$ eV，对应于截止波长 $\lambda \approx 3.3$ μ微米。发现依赖于成分的带隙能遵循Shim模型。在室温下，我们观察到的共振电流密度为${Ĵ}_{\mathrm{[R}Ës}=0.143$kA cm ^-2，峰谷电流比高达$PVC\mathrm{[R}=6.2$。在低温下$Ť<50$ K，峰谷电流比增加到 $PVC\mathrm{[R}=16$。