While the importance of atomic-scale features in silicon-based device for quantum application has been recognized and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the context of quantum technology. In this paper, we report random telegraph signals (RTSs) originated from trapping and detrapping of an electron by a donor in the substrate of a p-type metal–oxide–semiconductor field-effect-transistor. RTSs, not seen when the substrate was grounded, were observed when a positive bias was applied to the substrate. The comprehensive study on the signals observed reveals that the nature of the RTSs is discrete threshold voltage variations due to the change in the depletion layer width depending on the charge state of a single dopant, neutral or positively charged.

中文翻译：

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低温下由金属-氧化物-半导体场效应晶体管中的单个掺杂剂引起的随机电报信号

尽管人们已经认识到硅基器件中的原子尺度特征对于量子应用的重要性，甚至现在甚至可以放置单个原子，但在量子技术的背景下，掺杂剂在衬底中的作用并未引起人们的广泛关注。在本文中，我们报告了随机电报信号（RTS），该信号来自施主在p的衬底中俘获和释放电子。型金属-氧化物-半导体场效应晶体管。当对基板施加正偏压时，会观察到RTS（当基板接地时未看到）。对观察到的信号的全面研究表明，由于耗尽层宽度的变化取决于单个掺杂剂（中性或带正电）的电荷状态，RTS的性质是离散的阈值电压变化。