Here, thermal stabilities for Ohmic contact properties of Pt, Au, and Pd on the same hydrogen-terminated diamond (H-diamond) epitaxial layer are investigated. A long-term annealing process is performed with an annealing temperature and time of 400 °C and 8 h, respectively. Before annealing, good Ohmic contact properties are observed for only two contacts of the Pt/H-diamond and Pd/H-diamond with specific contact resistivity (ρ_C) values of 2.7 × 10⁻³ Ω cm² and 2.6 × 10⁻⁴ Ω cm², respectively. After long-term annealing, all three contacts on the H-diamond show good Ohmic contact properties. The ρ_C values for the Pt/H-diamond and Au/H-diamond are 3.1 × 10⁻² Ω cm² and 4.2 × 10⁻⁴ Ω cm², respectively. They are higher than that of the Pd/H-diamond (1.1 × 10⁻⁴ Ω cm²). Therefore, low ρ_C and good thermal stability for the Pd/H-diamond are achieved. This is meaningful for pushing forward the development of H-diamond-based electronic devices for high-temperature applications.

中文翻译：

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Pt，Au和Pd电极在同一氢封端的金刚石上的欧姆接触特性的热稳定性研究

在此，研究了在同一氢封端的金刚石（H金刚石）外延层上Pt，Au和Pd的欧姆接触特性的热稳定性。长期退火过程分别在400°C和8 h的退火温度和时间下进行。退火之前，良好的欧姆接触特性观察到只有两个在Pt / H-金刚石和Pd / H-金刚石比接触电阻（触点ρ _Ç）的2.7×10值^-3 Ω厘米²和2.6×10 ^-4分别为Ωcm ²。长期退火后，H形金刚石上的所有三个触点都显示出良好的欧姆接触特性。的ρ _Ç用于在Pt / H-金刚石和Au / H-金刚石值是3.1×10^-2 Ω厘米²和4.2×10 ^-4 Ω厘米²分别。它们比的Pd / H-金刚石（1.1×10的更高^-4 Ω厘米²）。因此，低ρ _Ç和用于PD / H-金刚石良好的热稳定性得以实现。这对于推动高温应用中基于H金刚石的电子设备的开发具有重要意义。