A new record‐high room‐temperature electron Hall mobility (μ_RT = 194 cm² V⁻¹ s⁻¹ at n ≈ 8 × 10¹⁵ cm⁻³) for β‐Ga₂O₃ is demonstrated in the unintentionally doped thin film grown on (010) semi‐insulating substrate via metal‐organic chemical vapor deposition (MOCVD). A peak electron mobility of ≈9500 cm² V⁻¹ s⁻¹ is achieved at 45 K. Further investigation on the transport properties indicates the existence of sheet charges near the epilayer/substrate interface. Si is identified as the primary contributor to the background carrier in both the epilayer and the interface, originating from both surface contamination and growth environment. The pregrowth hydrofluoric acid cleaning of the substrate leads to an obvious decrease in Si impurity both at the interface and in the epilayer. In addition, the effect of the MOCVD growth condition, particularly the chamber pressure, on the Si impurity incorporation is studied. A positive correlation between the background charge concentration and the MOCVD growth pressure is confirmed. It is noteworthy that in a β‐Ga₂O₃ film with very low bulk charge concentration, even a reduced sheet charge density plays an important role in the charge transport properties.

中文翻译：

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在金属有机化学气相沉积生长（010）β-Ga2O3中探测电荷传输和背景掺杂

新的记录高的室温电子霍尔迁移率（μ _RT  =194厘米²  V ^-1 小号^-1在Ñ  ≈8×10 ¹⁵ 厘米^-3），用于的β-Ga ₂ ö ₃演示了非故意掺杂薄膜通过金属有机化学气相沉积（MOCVD）在（010）半绝缘衬底上生长。峰值电子迁移率约为9500 cm ²  V ^-1  s ^-1在45 K时达到了最大吸收速率。对传输特性的进一步研究表明，在外延层/基底界面附近存在薄层电荷。Si被认为是外延层和界面中背景载体的主要贡献者，其源于表面污染和生长环境。基板的预生长氢氟酸清洗可导致界面和外延层中的Si杂质明显减少。另外，研究了MOCVD生长条件，特别是腔室压力对Si杂质掺入的影响。证实了背景电荷浓度与MOCVD生长压力之间的正相关。值得注意的是，在一个的β-Ga ₂ ö ₃ 具有极低总电荷浓度的薄膜，甚至降低的片电荷密度在电荷传输性能中也起着重要作用。