Abstract Conducting negative bias temperature instability (NBTI) stress/recovery experiments on n-type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to reveal the existence of turn around phenomenon during stress phase. At first stage of stress, threshold voltage (Vth) shifts positively, followed later by a negative shift. Furthermore, recovery phase has shown, for the first time, the contribution of three components to Vth shift (ΔVth) in n-MOSFET. One component is permanent (ΔVthP) and dominated by interface traps, created during stress at the Si/SiO2 interface. The other components are oxide traps, generated in the interfacial oxide region. Both traps are positively charged; one is cyclic (ΔVthC), while the other is totally recoverable (ΔVthR).

中文翻译：

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n-MOSFET器件中NBTI诱导陷阱的恢复研究

摘要 通过对 n 型金属氧化物半导体场效应晶体管 (n-MOSFET) 进行负偏压温度不稳定性 (NBTI) 应力/恢复实验，我们已经能够揭示应力阶段存在翻转现象。在应力的第一阶段，阈值电压 (Vth) 正向偏移，然后负向偏移。此外，恢复阶段首次显示了三个组件对 n-MOSFET 中 Vth 偏移 (ΔVth) 的贡献。一种成分是永久性的 (ΔVthP)，主要是在 Si/SiO2 界面应力期间产生的界面陷阱。其他成分是在界面氧化物区域中产生的氧化物陷阱。两个陷阱都带正电；一个是循环的（ΔVthC），而另一个是完全可恢复的（ΔVthR）。