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Study of tri-gate AlGaN/GaN MOS-HEMTs for power application
Microelectronic Engineering ( IF 2.3 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.mee.2020.111366 Kuan Ning Huang , Yueh Chin Lin , Jin Hwa Lee , Chia Chieh Hsu , Jing Neng Yao , Chieh Ying Wu , Chao Hsin Chien , Edward Yi Chang
Microelectronic Engineering ( IF 2.3 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.mee.2020.111366 Kuan Ning Huang , Yueh Chin Lin , Jin Hwa Lee , Chia Chieh Hsu , Jing Neng Yao , Chieh Ying Wu , Chao Hsin Chien , Edward Yi Chang
This article has been withdrawn at the request of the author(s) and published in Micro and Nano Engineering. The Publisher apologizes for any inconvenience this may cause. The full Elsevier Policy on Article Withdrawal can be found at https://www.elsevier.com/about/our-business/policies/article-withdrawal
中文翻译：
用于电源应用的三栅极 AlGaN/GaN MOS-HEMT 的研究
本文已应作者要求撤回，发表于Micro and Nano Engineering。出版商对此可能造成的任何不便深表歉意。完整的 Elsevier 文章撤回政策可在 https://www.elsevier.com/about/our-business/policies/article-withdrawal 找到
更新日期：2020-05-01
中文翻译：
用于电源应用的三栅极 AlGaN/GaN MOS-HEMT 的研究
本文已应作者要求撤回，发表于Micro and Nano Engineering。出版商对此可能造成的任何不便深表歉意。完整的 Elsevier 文章撤回政策可在 https://www.elsevier.com/about/our-business/policies/article-withdrawal 找到
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