The properties of In-doped TiO₂ grown by Pulsed Laser Deposition on (1 0 0) and (3 1 1)B GaAs substrates have been investigated. X-ray diffraction and photoluminescence results have shown that samples grown on (3 1 1)B GaAs planes have better crystallographic properties than those grown on (1 0 0). Both anatase and rutile phases were detected in samples with lower In-doping (In = 5 nm) while only rutile phase was observed for higher In-doped samples (In = 15 nm). Furthermore, In-doping adversely affected the electrical properties of samples grown on (1 0 0) substrates while it enhanced those of (3 1 1)B samples. Two shallow defects were detected in all samples except for (3 1 1)B sample (In = 15 nm) where three shallow defects were observed. The presence of more shallow defects in this sample is evidenced by a red-shift in the absorption spectrum. It was concluded that sample (3 1 1)B (In = 15 nm) is best among all other samples and makes it more suitable for solar cell applications.

掺TiO ₂的性质已经研究了通过脉冲激光沉积在（1 0 0）和（3 1 1）B GaAs衬底上生长的方法。X射线衍射和光致发光结果表明，在（3 1 1）B GaAs平面上生长的样品比在（1 0 0）上生长的样品具有更好的晶体学性质。在较低In掺杂（In = 5 nm）的样品中检测到锐钛矿相和金红石相，而对于较高In掺杂的样品（In = 15 nm），仅观察到金红石相。此外，In掺杂不利地影响了在（1 0 0）衬底上生长的样品的电性能，同时增强了（3 1 1）B样品的电性能。除了（3 1 1）B样品（In = 15 nm）外，在所有样品中均检测到两个浅缺陷，其中观察到三个浅缺陷。该样品中较浅缺陷的存在由吸收光谱的红移证明。