Abstract Bi is used for the first time to control the Sb content in GaAsSb epitaxial layers, grown by liquid phase epitaxy (LPE) with high Sb in the layers (>10 at%). This is evidenced by a steady decrease of the Sb incorporation in the layers, obtained from high resolution X-ray diffraction (HRXRD) measurements, with increased Bi addition to the growth melt. X-ray photoelectron spectroscopy (XPS) is used to study the different surface bonding states of the constituting elements of the epilayer, and the results suggest that Bi is not incorporated in the layer but reside over the surface of the material, in metallic or in oxide states. A band gap reduction of 220 meV is measured in GaAsSb layer containing 11 at% Sb, by low temperature photoluminescence (PL) spectroscopy. Addition of Bi to the growth melt resulted in a blue shift of the band gap upto 40 meV. From low temperature PL and temperature dependent PL, it is observed that the luminescence intensity increases and the full width at half maximum (FWHM) decreases for the layers, grown from Ga-As-Sb-Bi melts compared to layers grown from the a melt without Bi, suggesting improved surface and crystalline quality of the epitaxial layers.

中文翻译：

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通过液相外延生长的 GaAsSb 层的成分和结构特性的控制，通过向生长熔体中添加 Bi

摘要 Bi 首次用于控制 GaAsSb 外延层中的 Sb 含量，该外延层是通过液相外延 (LPE) 生长的，层中含有高 Sb (>10 at%)。这可以通过高分辨率 X 射线衍射 (HRXRD) 测量获得的层中 Sb 掺入的稳定减少来证明，同时向生长熔体中添加 Bi 增加。X 射线光电子能谱 (XPS) 用于研究外延层构成元素的不同表面键合状态，结果表明 Bi 未掺入该层中，而是存在于材料表面，金属或氧化物状态。通过低温光致发光 (PL) 光谱法在含有 11 at% Sb 的 GaAsSb 层中测量到 220 meV 的带隙减少。向生长熔体中添加 Bi 导致带隙蓝移高达 40 meV。从低温 PL 和温度相关 PL，观察到发光强度增加，半峰全宽 (FWHM) 减小，与从 a 熔体生长的层相比，从 Ga-As-Sb-Bi 熔体生长的层没有 Bi，表明外延层的表面和结晶质量得到改善。